IT Home News on October 29: Hunan Titan Future Technology Co., Ltd. issued a press release this month,announcing the launch of China's first 12-inch polycrystalline silicon carbide substrate, targeting the heat dissipation bottleneck of AI chips and advanced packaging.
According to IT Home's review of public information, a 12-inch polycrystalline silicon carbide (SiC) substrate is a large-size ceramic base plate approximately 300 millimeters in diameter, composed of many tiny silicon carbide grains. This substrate mainly serves as a high-thermal-conductivity support and heat dissipation base in advanced packaging and high-temperature semiconductor processes, helping high-power devices such as AI chips export heat quickly.
In the press release, the company noted that in the current semiconductor silicon carbide track, market attention is mostly focused on single-crystal SiC substrates, while polycrystalline silicon carbide supporting materials represent an industry blue ocean and hidden rigid demand.
High-end polycrystalline materials have long been controlled by others, becoming a key pain point restricting the capacity expansion of domestic production lines; large-size densification, high-purity preparation, and thermal performance matching are core technical bottlenecks that urgently need to be overcome.
According to reports, the product was made by the team through more than two years of original full-process development, during which two vapor deposition furnaces were lost, and technical challenges such as material densification, large-size forming, and stress control were conquered.
In key performance, the substrate's deposition rate reaches 60 micrometers per hour, significantly higher than the 10 to 20 micrometers level of domestic and foreign peers; the minimum resistivity can be less than 1 milliohm · centimeter, better than the foreign peers' level of about 10 milliohm · centimeters; pore defects are fewer than 0.1 per square centimeter, helping improve chip yield.
The product has now passed relevant TSMC certification tests, has been sampled to Samsung, and cooperation has been launched with companies such as Google and NVIDIA. The project is in the transition stage from sample verification to small-batch trial production, with large-scale supply expected gradually after 2027.
The company invested in 2026 to build a new industrial base project for high-purity high-density silicon carbide components and polycrystalline substrates; after full production, it can annually produce 200,000 pieces of high-performance silicon carbide and tantalum carbide coating products for semiconductors.
The official introduction states that this launch of China's first 12-inch Poly-SiC polycrystalline substrate achieves breakthroughs in multiple key indicators: relying on self-developed core technologies such as vapor deposition and supercritical multiphase TaC coating, the product achieves an ultra-high thermal conductivity of ≥300W/(m・K), far exceeding the average level of international advanced semiconductor material manufacturers, while achieving zero long cracks, micro cracks, and extremely low pore defects, with excellent thermal performance and structural stability, completely breaking the foreign technology monopoly on large-size forming and high-purity preparation.
The product targets two core application scenarios:
AI chip advanced packaging heat dissipation substrate:Relying on Poly-SiC's excellent thermal conductivity (2-3 times that of traditional AlN / Cu solutions) and excellent adaptability, it forms an efficient heat conduction channel and perfectly solves heat dissipation problems; the polycrystalline silicon carbide composite substrate developed by our company saves nearly 20% of the cost compared to existing industry technologies.
Composite substrates and etching core components:Due to domestic window guidance restrictions on single-crystal silicon carbide substrates, large-scale mass production and cost reduction are achieved through composite substrates. Etching ring components increase customers' processing yield by 60%.
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